Next-generation magnetic materials for advanced electronics

An international team including Yishui Zhou, Dr. Yixi Su, and researchers from the Jülich Centre for Neutron Science at the Heinz Maier-Leibnitz Zentrum (MLZ) has achieved major advances in magnetic materials with strong potential for future electronic and quantum technologies. One study investigates a chiral antiferromagnetic semiconductor, while another examines a family of topological metals with an intricate, woven-like atomic structure.

A happy team from the Jülich Centre for Neutron Science at MLZ after a successful experiment at the Institute of Laue-Langevin in France (Yishui Zhou (middle), Chun-Hao Huang (left), and Po-Chun Chang (right)). © Yixi Su / JCNS

A happy team from the Jülich Centre for Neutron Science at MLZ after a successful experiment at the Institute of Laue-Langevin in France (Yishui Zhou (middle), Chun-Hao Huang (left), and Po-Chun Chang (right)). © Yixi Su / JCNS

The Jülich Centre for Neutron Science (JCNS) at the MLZ in Garching contributed the sample synthesis and laboratory characterisation (single-crystal growth, single-crystal XRD, EDX and preliminary transport measurements), while neutron work was performed at ILL, PSI and ANSTO. Together, the findings show how unconventional magnetic textures and topological effects could be harnessed for next-generation applications.

Topology-enabled memory prospects

In a study on a chiral antiferromagnetic semiconductor known as EuIr₂P₂, scientists discovered an exceptionally large topological Hall effect (THE). THE arises when electrons, in addition to responding to an external magnetic field, are influenced by an emergent magnetic field produced by swirling, noncoplanar arrangements of atomic spins. This effect is also commonly found in magnetic skyrmion materials, in which tiny, stable magnetic whirlpools can be manipulated with minimal energy. Skyrmions are highly promising for future data storage technologies because they enable ultra-high-density memory devices with low power consumption.

The characterisation of the samples was performed at the single crystal X-ray diffractometer of JCNS at the MLZ. © FRM II / TUM

The characterisation of the samples was performed at the single crystal X-ray diffractometer of JCNS at the MLZ. © FRM II / TUM

The authors caution that the results point to noncoplanar magnetic textures as the likely origin of THE, but do not uniquely identify skyrmions in EuIr₂P₂; further microscopic studies are needed before making a definitive skyrmion claim. Nonetheless, the large THE highlights promising routes for skyrmion-inspired or other topology-based memory concepts once the underlying texture is confirmed.

Antiferromagnetic spintronics

The second study on RV₆Sn₆ compounds offers insights into another emerging field: antiferromagnetic spintronics. Unlike traditional ferromagnets, antiferromagnetic materials have magnetic moments that alternate in direction, making them exceptionally fast and resistant to external magnetic fields. The RV₆Sn₆ materials exhibit various magnetic orders depending on the rare-earth element used—some show ferromagnetic alignment, while others, like ErV₆Sn₆, display antiferromagnetic order. These characteristics make them ideal candidates for next-generation electronic devices that require rapid switching speeds and robust performance under a range of conditions.

Dr. Yixi Su from the Jülich Centre for Neutron Science (JCNS) at the MLZ contributed to both studies. © FRM II

Dr. Yixi Su from the Jülich Centre for Neutron Science (JCNS) at the MLZ contributed to both studies. © FRM II

Enhanced magnetic field sensors
The exceptionally large THE observed in EuIr₂P₂ also could pave the way for magnetic field sensors with enhanced sensitivity. Such sensors could detect minute changes in magnetic fields with far greater precision than current technologies allow. This has significant implications for medical imaging, where improved magnetic sensors could yield higher-resolution scans, as well as for industrial and navigational applications that demand precise magnetic field measurements.

A promising future

Together, these groundbreaking studies not only deepen our understanding of complex magnetic interactions but also highlight practical avenues for the development of advanced electronic and quantum devices. Insights gained from skyrmion-based phenomena and antiferromagnetic spintronics hold the potential to drive innovations in high-density data storage, energy-efficient electronics, and ultra-sensitive magnetic sensors. This exciting research marks a significant step toward integrating topological and magnetic properties into practical technologies that could reshape our digital future.